BAS70SV【PDF 1/5 页】DIODE SCHOTTKY 70V 70MA SOT563-6

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BAS70SV — 70 V Dual-S

chottky Barrier Diodes

? 2010 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAS70SV Rev. 1.1.0 1

June 2013

BAS70SV

70 V Dual-Schottky Barrier Diodes

Features

? Low Forward-Voltage Drop

? Low Capacitance

? Low Leakage Current

? Fast Switching

? Ultra-Small Surface-Mount Package

? Lead Free by Design / RoHS Compliant

? Green Compound

? 0.6mm Maximum Package Height

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA

= 25°C unless otherwise noted.

Thermal Characteristics

Note:

1. Device mounted on board compliant to JESD51-2 and JESD51-3 standards.

Part Number Marking Package Packing Method

BAS70SV AD SOT-563F 6L Tape and Reel

Symbol Parameter

Value Units

VRRM

Maximum Repetitive Reverse Voltage 70 V

IF(AV)

Average Rectified Forward Current 70 mA

IFSM

Forward Surge Current (8.3mS Single Half Sine Wave) 2.5 A

TJ, TSTG

Operating Junction and Storage Temperature Range -55 to +150

°C

Symbol Parameter Value Units

Power Dissipation 200 mW

RθJA

Thermal Resistance, Junction to Ambient(1)

625

°C/W

ELECTRICAL SYMBOL

(Pin1)

SOT-563F

BAS70SV Marking : AD

Note:

Pinouts are symmetrical. Pin 1 & 4 are interchangeable.

The placement of the device in the carrier tape can be of either orientation.

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